Nell Power Semiconductor 2SK2611
2SK2611 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS, relay drive and general purpose switching applications.| Part No. | 2SK2611 |
|---|---|
| Datasheet | 2SK2611 Download |
| Manufacturer |  Nell Power Semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The Nell threshold voltage of 4 volts. D G D S TO-3PBFEATURES
RDS(ON) = 1.10Ω @ VGS = 10V Ultra low gate charge(58nC typical) Low reverse transfer capacitance (CRSS = 45pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 9 900 1.10 @ VGS = 10V 58ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS VDGR Drain to Source voltage Drain to Gate voltage TJ=25°C to 150°C RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current (VGS = 10V) TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=9A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) lAS=9A, L=15.0mH dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD Derating factor above 25°C TC=25°C TO-3PB TJ Operation junction t...
