2SK3316 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV) Switching Regulator Applications Fast reverse recovery time Low drain- source ON resistance High forward transfer admittance Low leakage current Enhancement mode : trr = 60 ns (typ.) : RDS (ON) = 1.6 Ω (typ.) : |Yfs| = 3.8 S (typ.) Unit: mm Built-in high-speed free-wheeling diode : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A) Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 - 55~150 Unit V V V A A W m J A m J °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA - SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch- c) Rth (ch- a) Max 3.57 62.5 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 m H, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 2004-07-06 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate- source breakdown voltage Drain cut- off current Drain- source breakdown voltage Gate threshold voltage Drain- source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±100 µA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 m...