Absolute Maximum Ratings TC = 25°C
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 600 ±30 ±15 ±60 11.
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Power MOSFETs
2SK3318
Silicon N-channel power MOSFET
(0.7)
Unit: mm
15.0±0.3 11.0±0.2 5.0±0.2 (3.2)
For switching ■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
21.0±0.5
φ 3.2±0.1
(3.5) Solder Dip
15.0±0.2
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 600 ±30 ±15 ±60 112.5 100 3 150 −55 to +150 °C °C Unit V V A A mJ W
16.2±0.5
5.45±0.3 10.9±0.5 1 2 3
1: Gate 2: Drain 3: Source TOP-3F-A1 Package
Internal Connection
D G S
Conditions Min 600 −1.
2SK3318 Datasheet
