The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DataSheet.in
TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563
2SK3563
unit：ｍｍ
Switching Regulator Applications
10±0.3
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit
0.69±0.15
2.8Max
V V V
2.54±0.25 0.64±0.15 2.54±0.25 2.6
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1. 2. 3.
2SK3563 Datasheet
