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Toshiba Electronic Components Datasheet

2SK363 Datasheet

Silicon N Channel Junction Type Transistor

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK363
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SK363
Unit: mm
· High breakdown voltage: VGDS = 40 V
· High input impedance: IGSS = −1.0 nA (max) (VGS = 30 V)
· Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-40
10
400
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
VGS = -30 V, VDS = 0
¾ ¾ -1.0 nA
V (BR) GDS VDS = 0, IG = -100 mA
-40 ¾
¾
V
IDSS
VDS = 10 V, VGS = 0
(Note 1)
5.0 ¾ 30 mA
VGS (OFF) VDS = 10 V, ID = 0.1 mA
-0.3
¾ -1.2
V
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25
60
¾
mS
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
¾ 75 ¾ pF
Crss VGD = -10 V, ID = 0, f = 1 MHz
¾ 15 ¾ pF
RDS (ON) VDS = 10 mV, VGS = 0
(Note 2) ¾ 20 ¾
W
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Condition of the typical value IDSS = 15 mA
1 2003-03-25


Toshiba Electronic Components Datasheet

2SK363 Datasheet

Silicon N Channel Junction Type Transistor

No Preview Available !

2SK363
2 2003-03-25


Part Number 2SK363
Description Silicon N Channel Junction Type Transistor
Maker Toshiba Semiconductor
Total Page 5 Pages
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