Datasheet Summary
2SA1020
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications Power Switching Applications
- -
- Low Collector saturation voltage: VCE (sat) =
- 0.5 V (max) (IC =
- 1 A) High-speed switching: tstg = 1.0 µs (typ.) plementary to 2SC2655 Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating
- 50
- 50
- 5
- 2 900 150
- 55 to 150 Unit V V V A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Electrical Characteristics (Ta = 25°C)
Characteristics...
