C3112 Datasheet | Toshiba

2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications - - - High DC current gain: h FE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 m A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 400 125 - 55~125 Unit V V V m A m A m W °C °C JEDEC TO-92 JEITA SC-43 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.21 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO h FE (Note) VCE (sat) f T Cob NF (1) Noise figure NF (2) Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 m A IC = 100 m A, IB = 10 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 m A, f = 100 Hz, RG = 10 kΩ VCE = 6 V, IC = 0.1 m A, f = 1 k Hz, RG = 10 kΩ Min ⎯ ⎯ 600 ⎯ 100 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 0.12 250 3.5 0.5 0.3 Max 0.1 0.1 3600 0.25 ⎯ ⎯ ⎯ d B ⎯ V MHz p F Unit μA μA Note: h FE classification A: 600~1800, B: 1200~3600 2007-11-01 Free Datasheet http://../ 2SC3112 2007-11-01...