C3112 Overview
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current:.
Datasheet Details
| Part number | C3112 |
|---|---|
| Datasheet | C3112_ToshibaSemiconductor.pdf |
| File Size | 487.09 KB |
| Manufacturer | Toshiba |
| Description | 2SC3112 |
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