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Toshiba Electronic Components Datasheet

C3112 Datasheet

2SC3112

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
High DC current gain: hFE = 600~3600
High breakdown voltage: VCEO = 50 V
High collector current: IC = 150 mA (max)
2SC3112
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 150 mA
Base current
IB 30 mA
Collector power dissipation
PC 400 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55~125
°C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-43
temperature/current/voltage and the significant change in
TOSHIBA
2-5F1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.21 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
NF (1)
NF (2)
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kΩ
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
Note: hFE classification A: 600~1800, B: 1200~3600
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
600 3600
0.12 0.25 V
100 250 MHz
3.5 pF
0.5
dB
0.3
1 2007-11-01
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Toshiba Electronic Components Datasheet

C3112 Datasheet

2SC3112

No Preview Available !

2SC3112
2 2007-11-01


Part Number C3112
Description 2SC3112
Maker Toshiba Semiconductor
PDF Download

C3112 Datasheet PDF





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