C3112 Description
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current:.
C3112 is 2SC3112 manufactured by Toshiba.
| Part Number | Description |
|---|---|
| C3113 | 2SC3113 |
| C3120 | 2SC3120 |
| C3123 | 2SC3123 |
| C3148 | 2SC3148 |
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current:.