TOSHIBA Transistor Silicon NPN Triple Diffused Type
Power Amplifier Applications
• Complementary to 2SA1939
• Suitable for use in 40-W high fidelity audio amplifier’s output stage
www.DataSheetA4Ub.csomolute Maximum Ratings (Tc = 25°C)
Collector power dissipation
(Tc = 25°C)
Storage temperature range
Tj 150 °C
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 4.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).