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Toshiba Electronic Components Datasheet

C5199 Datasheet

2SC5199

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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5199
Power Amplifier Applications
2SC5199
Unit: mm
High breakdown voltage: VCEO = 160 V (min)
Complementary to 2SA1942
Suitable for use in 80-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
VCBO
VCEO
VEBO
IC
IB
PC
160 V
160 V
5V
12 A
1.2 A
120 W
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-21F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 9.75 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10


Toshiba Electronic Components Datasheet

C5199 Datasheet

2SC5199

No Preview Available !

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 160 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 5 V, IC = 6 A
IC = 8 A, IB = 0.8 A
VBE VCE = 5 V, IC = 6 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
TOSHIBA
2SC5199
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC5199
Min Typ. Max Unit
― ― 5.0 μA
― ― 5.0 μA
160
V
55 160
35 74
0.35 2.5
V
1.0 1.5
V
30 MHz
170
pF
2 2006-11-10


Part Number C5199
Description 2SC5199
Maker Toshiba Semiconductor
Total Page 4 Pages
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