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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5354
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
2SC5354
Unit: mm
• Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A)
• High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900
V
800
V
7
V
5 A
8
2
A
100
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.
C5354 Datasheet
