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Toshiba Electronic Components Datasheet

C5703 Datasheet

2SC5703

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2SC5703
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5703
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Industrial Applications
Unit: mm
High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
(Note)
Tj
Tstg
100
80
50
7
4
7
400
800
1250
150
55 to 150
V
V
V
V
A
mA
mW
°C
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 100 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.6 A
IC = 1.6 A, IB = 32 mA
IC = 1.6 A, IB = 32 mA
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ∼− 30 V, RL = 19
IB1 = −IB2 = 53.3 mA
Min Typ. Max Unit
  100 nA
  100 nA
50  
V
400 1000
200
  0.12 V
  1.10 V
26 pF
45
700
ns
55
1 2001-12-17


Toshiba Electronic Components Datasheet

C5703 Datasheet

2SC5703

No Preview Available !

20 µs
IB1
Input
IB2
Duty cycle < 1%
IB1
IB2
VCC
Output
Figure 1 Switching Time Test Circuit &
Timing Chart
Marking
2SC5703
WA
2 2001-12-17


Part Number C5703
Description 2SC5703
Maker Toshiba Semiconductor
PDF Download

C5703 Datasheet PDF






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