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CMZ18 - Silicon Diffused Type Zener Diode

Download the CMZ18 datasheet PDF (CMZ12 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon diffused type zener diode.

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Note: The manufacturer provides a single datasheet file (CMZ12-ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CMZ18
Manufacturer Toshiba
File Size 288.88 KB
Description Silicon Diffused Type Zener Diode
Datasheet download datasheet CMZ18 Datasheet

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Other Datasheets by Toshiba Semiconductor
  • CMZ12 - Silicon Diffused Type Zener Diode
  • CMZ13 - Silicon Diffused Type Zener Diode
  • CMZ15 - Silicon Diffused Type Zener Diode
  • CMZ16 - Silicon Diffused Type Zener Diode
  • CMZ20 - Silicon Diffused Type Zener Diode
  • CMZ22 - Silicon Diffused Type Zener Diode
  • CMZ24 - Silicon Diffused Type Zener Diode
  • CMZ27 - Silicon Diffused Type Zener Diode

Full PDF Text Transcription

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○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm • Average power dissipation : P = 2 W • Zener voltage : VZ = 12 to 51 V • Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1. Anode 2. Cathode Junction temperature Tj −40 to 150 °C Storage temperature range Tstg −40 to 150 °C Note 1: Ta = 30°C Device mounted on a ceramic board Board size : 50 mm × 50 mm Land Pattern size : 2 mm × 2 mm Board thickness : 0.64 mm JEDEC JEITA TOSHIBA Weight: 0.023 g (typ.) ― ― 3-4E1S Note 2: Using continuously under heavy loads (e.g.
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