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CMZ39 - Silicon Diffused Type Zener Diode

Download the CMZ39 datasheet PDF. This datasheet also covers the CMZ12 variant, as both devices belong to the same silicon diffused type zener diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (CMZ12-ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CMZ39
Manufacturer Toshiba
File Size 288.88 KB
Description Silicon Diffused Type Zener Diode
Datasheet download datasheet CMZ39 Datasheet

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Other Datasheets by Toshiba

Part Number Description
CMZ30 (CMZ12 - CMZ53) Constant Voltage Regulation Transient Suppressors
CMZ33 Silicon Diffused Type Zener Diode
CMZ36 Silicon Diffused Type Zener Diode
CMZ12 Silicon Diffused Type Zener Diode
CMZ13 Silicon Diffused Type Zener Diode

Full PDF Text Transcription

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○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm • Average power dissipation : P = 2 W • Zener voltage : VZ = 12 to 51 V • Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1. Anode 2. Cathode Junction temperature Tj −40 to 150 °C Storage temperature range Tstg −40 to 150 °C Note 1: Ta = 30°C Device mounted on a ceramic board Board size : 50 mm × 50 mm Land Pattern size : 2 mm × 2 mm Board thickness : 0.64 mm JEDEC JEITA TOSHIBA Weight: 0.023 g (typ.) ― ― 3-4E1S Note 2: Using continuously under heavy loads (e.g.
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