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DSF01S30SC Datasheet - Toshiba Semiconductor

DSF01S30SC Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.1 9±0.02 Abusolute Maximum Ratings (Ta = 25°C) ２ 0.025±0.015 0.62 ±0.03 0.3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 100 2 125 55 to 125 : Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm..

DSF01S30SC-ToshibaSemiconductor.pdf