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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF07S30U
DSF07S30U
High Speed Switching Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range
VR IO IFSM Tj Tstg
30 700 ＊
5 125 −55 to 125
V mA A °C °C
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
DSF07S30U Datasheet
