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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF01S30SC
DSF01S30SC
High-Speed Switching Application
Unit: mm
0.1 9±0.02
Abusolute Maximum Ratings (Ta = 25°C)
２
0.025±0.015
0.62 ±0.03 0.3 8
Characteristic
Symbol
Rating
Unit
Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range
VR IO IFSM Tj Tstg
30 100*
2 125 −55 to 125
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
V mA A °C °C
１ 0 .32±0.03
0.3±0.03 0.19±0.02
0.27±0.02 0.025±0.015
１： CATHODE ２： ANODE
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
DSF01S30SC Datasheet
