DSR07S30U Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR07S30U DSR07S30U High Speed Switching Application Unit: mm Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 700 ＊ 5 125 −55 to 125 V mA A °C °C : Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.