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GT30J122 Silicon N-Channel IGBT

GT30J122 Description

www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTE.

GT30J122 Applications

* Enhancement mode type High speed: tf = 0.25μs (Typ. ) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ. ) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power diss

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Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT30J122-like datasheet