TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING
• Enhancement mode type
• High speed: tf = 0.25μs (Typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Collector power dissipation
(Tc = 25°C)
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 5.8 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Datasheet pdf - http://www.DataSheet4U.net/