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Toshiba Electronic Components Datasheet

GT30J122 Datasheet

4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

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GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING
APPLICATIONS
Unit: mm
Enhancement mode type
High speed: tf = 0.25μs (Typ.) (IC = 50A)
Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
VCES
VGES
IC
ICP
PC
Tj
Tstg
600
±20
30
100
75
150
55~150
V
V
A
W
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 5.8 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-01
Datasheet pdf - http://www.DataSheet4U.net/


Toshiba Electronic Components Datasheet

GT30J122 Datasheet

4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

No Preview Available !

www.DataSheet.co.kr
MARKING
GT30J122
TOSHIBA
GT30J122
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance (IGBT)
Symbol
Test Condition
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (jc)
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 50 mA, VCE = 5 V
IC = 50 A, VGE = 15 V
VCE = 10V, VGE = 0, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ ±500 nA
⎯ ⎯ 1.0 mA
3.0 6.0 V
2.1 2.8
V
2500
pF
0.20
0.30
μs
0.25 0.40
0.40
⎯ ⎯ 1.67 °C/W
2 2006-11-01
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GT30J122
Description 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
Maker Toshiba Semiconductor
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GT30J122 Datasheet PDF






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