GT30J122 datasheet by Toshiba.
| Part number | GT30J122 |
|---|---|
| Datasheet | GT30J122_ToshibaSemiconductor.pdf |
| File Size | 557.62 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit:.
View GT30J122A datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
GT30J122A | Silicon N-Channel IGBT | Toshiba |
| Part Number | Description |
|---|---|
| GT30J121 | Silicon N-Channel IGBT |
| GT30J101 | Silicon N-Channel IGBT |
| GT30J301 | N-Channel IGBT |
| GT30J311 | N-Channel IGBT |
| GT30J322 | Silicon N-Channel IGBT |
| GT30J324 | Silicon N-Channel IGBT |
