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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
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- Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit:...
