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Toshiba Electronic Components Datasheet

HN1K06FU Datasheet

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K06FU
HN1K06FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.5 to 1.5 V
· Switching speed is fast.
· Suitable for high-density mounting because of a compact package
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
VDS
VGSS
ID
PD (Note)
Tch
Tstg
Rating
20
10
100
200
150
-55 to 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
2-2J1C
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
ïYfsï
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = 10 V, VDS = 0 V
ID = 100 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 3 V, ID = 0.1 mA
VDS = 3 V, ID = 10 mA
ID = 10 mA, VGS = 2.5 V
VDS = 3 V, VGS=0 V, f = 1 MHz
VDS = 3 V, VGS=0 V, f = 1 MHz
VDS = 3 V, VGS=0 V, f = 1 MHz
VDD = 3 V, ID = 10 mA,
VGS = 0 to 2.5 V
VDD = 3 V, ID = 10 mA,
VGS = 0 to 2.5 V
Min Typ. Max Unit
¾ ¾ 1 mA
20 ¾ ¾ V
¾ ¾ 1 mA
0.5 ¾ 1.5 V
35 62 ¾ mS
¾ 3.5 6.0 W
¾ 14 ¾ pF
¾ 5.3 ¾ pF
¾ 16 ¾ pF
¾ 0.28 ¾
¾ 0.34 ¾
ms
1 2002-01-16


Toshiba Electronic Components Datasheet

HN1K06FU Datasheet

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

No Preview Available !

Equivalent Circuit (top view)
654
Marking
654
HN1K06FU
Q1
Q2
KJ
123
(Q1, Q2 common)
Switching Time Test Circuit
(a) Test circuit
2.5 V
0
10 ms
VIN
IN
ID OUT VDD = 3 V
D.U. <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
VDD Ta = 25°C
123
(b) VIN
VGS
(c) VOUT
VDS
2.5 V
0
VDD
10%
90%
10%
VDS (ON)
90%
tr
tf
ton toff
2 2002-01-16


Part Number HN1K06FU
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Maker Toshiba Semiconductor
Total Page 6 Pages
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