HN1K05FU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications Unit: mm - - - High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a pact package. Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V m A m W °C °C JEDEC JEITA TOSHIBA Weight: 6.8 mg ― ― 2-2J1C Note: TOTAL rating Electrical Characteristics (Ta = 25°C) (Q1, Q2 mon) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance 1 Drain-Source ON resistance 2 Drain-Source ON resistance 3 Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) 1 RDS (ON) 2 RDS (ON) 3 Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 m A, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 1.5 V, ID = 0.1 m A VDS = 1.5 V, ID = 10 m A ID = 1 m A, VGS = 1.2 V ID = 10 m A, VGS = 1.5 V ID = 10 m A, VGS = 2.5 V VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDD = 1.5 V, ID = 10 m A, VGS = 0 to 1.5 V VDD = 1.5 V, ID = 10 m A, VGS = 0 to 1.5 V Min ¾ 20 ¾ 0.5 35 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 70 15 10 7 12 3.4 12 0.35 0.2 Max 1 ¾ 1 1 ¾ 50 40 28 ¾ ¾ ¾ ¾ ms ¾ Unit m A V m A V m S W W W p F p F p F 2002-01-16 Equivalent Circuit (top view) 6 5 4 Marking 6 5 4 Q1 Q2 1 (Q1, Q2 mon) Switching Time Test Circuit (a) Test circuit ID 1.5 V 0 10 ms VIN IN 50 W RL OUT VDD = 1.5 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) mon Source Ta =...