HN1K06FU
HN1K06FU is TOSHIBA Field Effect Transistor Silicon N Channel MOS Type manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications Analog Switch Applications
Unit: mm
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High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of a pact package
Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V m A m W °C °C
JEDEC JEITA TOSHIBA Weight: 6.8 mg
― ― 2-2J1C
Note: TOTAL rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 mon)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 m A, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 3 V, ID = 0.1 m A VDS = 3 V, ID = 10 m A ID = 10 m A, VGS = 2.5 V VDS = 3 V, VGS=0 V, f = 1 MHz VDS = 3 V, VGS=0 V, f = 1 MHz VDS = 3 V, VGS=0 V, f = 1 MHz VDD = 3 V, ID = 10 m A, VGS = 0 to 2.5 V VDD = 3 V, ID = 10 m A, VGS = 0 to 2.5 V
Min ¾ 20 ¾ 0.5 35 ¾ ¾ ¾ ¾ ¾ ¾
Typ. ¾ ¾ ¾ ¾ 62 3.5 14 5.3 16 0.28 0.34
Max 1 ¾ 1 1.5 ¾ 6.0 ¾ ¾ ¾ ¾
Unit m A V m A V m S W p F p F p F ms ¾
2002-01-16
Equivalent Circuit (top view)
6 5 4
Marking
6 5 4
Q1 Q2
1 (Q1, Q2 mon)
Switching Time Test Circuit
(a) Test circuit
ID 2.5 V 0 10 ms VIN IN 50 W RL OUT VDD = 3 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) mon Source Ta = 25°C
(b) VIN
2.5 V 10%
90%
0 VDD
(c)...
