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JDV2S07S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S07S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series Resistance : rs = 0.42 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1K1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition
Weight: 0.0011 g (typ.)
Min 10 ¾ 4.0 1.85 2.0 ¾ Typ. ¾ ¾ 4.5 2.0 2.3 0.42 Max ¾ 3 4.9 2.
JDV2S07S Datasheet
