| Description | JDV2S07S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series Resistance : rs = 0.42 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V ... |
| Features |
60
5
Reverse current IR
Capacitance CV
3
1
2
0.1
25
1 0
1
2
3
4
5
6
7
8
9
10
0.01 0
4
8
12
16
Reverse voltage VR
(V)
Reverse voltage VR
(V)
rs – VR 0.7 0.6 f = 470 MHz 4 f = 1 MHz dC – Ta (%) Ta = 25°C 3 2 1 0 -1 -2 -3 -4 -40 6V 4 VR = 1 V 2 (9) 0.5 0.4 0.3 0.2 0.1 0 0.3 Capacitance change Ratio @C Series resistanc... |
| Datasheet |
 JDV2S07S Datasheet - 98.15KB |
