| Part number | JDV2S05E |
|---|---|
| Datasheet | JDV2S05E_ToshibaSemiconductor.pdf |
| File Size | 80.47 KB |
| Manufacturer | Toshiba |
| Description | VCO |
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JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 −55~125 Unit V °C °C Weight:.
| Part Number | Description |
|---|---|
| JDV2S01E | VCO for UHF band |
| JDV2S01S | TOSHIBA Diode Silicon Epitaxial Planar Type |
| JDV2S02E | VCO for UHF band |
| JDV2S07S | VCO for UHF Band Radio |
| JDV2S08S | VCO for UHF Band Radio |
| JDV2S10FS | VCO |
| JDV2S10S | VCO Diode |
| JDV2S10T | VCO for UHF Band Radio |
| JDV2S13FS | VCO Diode |
| JDV2S14E | Diode |
