| Description | JDV2S10T TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10T VCO for UHF Band Radio · · · High capacitance ratio: C0.5 V/C2.5 V = 2.5 (typ.) Low series resistance: rs = 0.35 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOS... |
| Features |
OSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety...
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| Datasheet |
 JDV2S10T Datasheet - 91.80KB |
