Part number:
K11A65D
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
324.75 KB
Description:
Tk11a65d.
* (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK11A65D 1: Gate (G) 2
K11A65D
Toshiba ↗ Semiconductor
324.75 KB
Tk11a65d.
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