The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK117
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
• • • • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −50 10 300 125 −55~125 Unit V mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of JEDEC TO-92 high temperature/current/voltage and the significant change in JEITA SC-43 temperature, etc.
K117 Datasheet
