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K1170 - 2SK1170

Key Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tempe.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1153 2SK1153
K1154 2SK1154
K1158 2SK1158
K1162 Silicon N-Channel MOS FET
K1164 2SK1164

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 –55 to +150 Unit V V A A A W °C °C 2 www.