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K1162 - Silicon N-Channel MOS FET

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storag.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1164 2SK1164
K1153 2SK1153
K1154 2SK1154
K1158 2SK1158
K1170 2SK1170

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.