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2SK1159, 2SK1160
Silicon N Channel MOS FET
REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G
1. Gate 2. Drain (Flange) 3. Source S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1159, 2SK1160
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
K1160 Datasheet
