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K1166 - Silicon N Channel MOS FET

This page provides the datasheet information for the K1166, a member of the K1165 Silicon N Channel MOS FET family.

Datasheet Summary

Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator and DC-DC converter Outline.

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Datasheet preview – K1166

Datasheet Details

Part number K1166
Manufacturer Renesas Technology
File Size 70.73 KB
Description Silicon N Channel MOS FET
Datasheet download datasheet K1166 Datasheet
Additional preview pages of the K1166 datasheet.

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Full PDF Text Transcription

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2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1165, 2SK1166 Absolute Maximum Ratings Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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