Download the K1166 datasheet PDF.
This datasheet also covers the K1165 variant, as both devices belong to the same silicon n channel mos fet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low on-resistance.
High speed switching.
Low drive current.
No secondary breakdown.
Suitable for switching regulator and DC-DC converter
Outline.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1166. For precise diagrams, and layout, please refer to the original PDF.
2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary b...
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resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1165, 2SK1166 Absolute Maximum Ratings Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
K1166 Datasheet
