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2SK1169, 2SK1170
Silicon N Channel MOS FET
REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
2
S 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1169, 2SK1170
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Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
K1169 Datasheet
