Toshiba Electronic Components Datasheet

K13A65U Datasheet

TK13A65U

No Preview Available !

TK13A65U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)

TK13A65U

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)

• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current

DC (Note 1)

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Symbol

VDSS

VGSS

IDP

EAS

IAR

EAR

Tch

Tstg

Rating

650

±30

4.0

150

−55 to 150

Unit

°C

Ф3.2 ± 0.2 10 ± 0.3

Unit: mm

2.7 ± 0.2

1.14 ± 0.15

0.69 ± 0.15

Ф0.2 M A

2.54 2.54

123

1: Gate

2: Drain

3: Source

JEDEC

⎯

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Internal Connection

Characteristics

Symbol

Max Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Rth (ch-c)

Rth (ch-a)

3.125

62.5

°C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 0.9 mH, RG = 25 Ω, IAR = 13 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Start of commercial production

2009-03

1 2013-11-01

Toshiba Electronic Components Datasheet

K13A65U Datasheet

TK13A65U

No Preview Available !

Electrical Characteristics (Ta = 25°C)

TK13A65U

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Switching time

Turn-ON time

Fall time

Turn-OFF time

Total gate charge

Gate-source charge

Gate-drain charge

Symbol

Test Condition

Min

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±30 V, VDS = 0 V

VDS = 650 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 6.5 A

VDS = 10 V, ID = 6.5 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

650

3.0

⎯

2.0

―

10 V

ID = 6.5 A VOUT

⎯

VGS

ton

50 Ω

RL = 31 Ω ⎯

VDD ≈ 200 V

toff Duty ≤ 1%, tw = 10 μs

⎯

Qgs VDD ≈ 400 V, VGS = 10 V, ID = 13 A

Qgd

⎯

Typ.

⎯

0.32

8.0

950

2300

Max

±1

100

⎯

5.0

0.38

―

30 ⎯

65 ⎯

8⎯

80 ⎯

17 ⎯

10 ⎯

7⎯

Unit

μA

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current (Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

⎯

IDR = 13 A, VGS = 0 V

IDR = 13 A, VGS = 0 V,

dIDR/dt = 100 A/μs

Min Typ. Max Unit

⎯ ⎯ 13 A

⎯ ⎯ 26 A

⎯ ⎯ −1.7 V

⎯ 430 ⎯

⎯ 7.0 ⎯ μC

Marking

K13A65U

Note 4 : A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Part No.

(or abbreviation code)

Lot No.

Note 4

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is Directive 2011/65/EU of the European Parliament and

of the Council of 8 June 2011 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment

2 2013-11-01

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf

K13A65U Datasheet

TK13A65U

K13A65U Datasheet

TK13A65U

Similar Datasheet

Part Number Start With