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K13A65U Datasheet - Toshiba Semiconductor

K13A65U Silicon N-Channel MOSFET

TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain curr.

K13A65U Features

* uipment, equipment used for automobiles, trains, ships and other transportation,

K13A65U-ToshibaSemiconductor.pdf