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Toshiba Electronic Components Datasheet

K2013 Datasheet

2SK2013

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
2SK2013
Audio Frequency Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SJ313
: VDSS = 180V
: |Yfs| = 0.7 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Gatesource voltage
Drain current
(Note 2)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
180
±20
1
25
150
55 to 150
V
V
A
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
JEITA
SC67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
K2013
Part No.
(or abbreviation code)
Lot No.
Note 1
Note 1: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of the
Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drainsource breakdown voltage
Gatesource cutoff voltage (Note 3)
Drainsource saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IGSS
V (BR) DSS
VGS (OFF)
VDS (ON)
|Yfs|
Ciss
Coss
Crss
VDS = 0, VGS = ±20 V
ID = 10 mA, VGS = 0
VDS = 10 V, ID = 10 mA
ID = 0.6 A, VGS = 10 V
VDS = 10 V, ID = 0.3 A
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDD 10 V, VGS = 0, f = 1 MHz
Note 2: Ensure that the channel temperature does not exceed 150°C.
Note 3: VGS (OFF) Classification
O: 0.8~1.6,
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Y: 1.4~2.8
1
Min Typ. Max Unit
— — ±100 nA
180 —
V
1.8 — 2.8
V
— 1.7 3.0
V
— 0.7 —
S
— 170 —
— 45 — pF
— 17 —
2009-09-29


Toshiba Electronic Components Datasheet

K2013 Datasheet

2SK2013

No Preview Available !

2SK2013
2 2009-09-29


Part Number K2013
Description 2SK2013
Maker Toshiba Semiconductor
PDF Download

K2013 Datasheet PDF






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