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Toshiba Electronic Components Datasheet

K2233 Datasheet

2SK2233

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2SK2233
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2π−MOSV)
2SK2233
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
4 V gate drive
Low drainsource ON resistance : RDS (ON) = 0.022 (typ.)
High forward transfer admittance : |Yfs| = 27 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
Enhancementmode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
45
180
100
246
45
10
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.25
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 µH, RG = 25 , IAR = 45 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-07-31


Toshiba Electronic Components Datasheet

K2233 Datasheet

2SK2233

No Preview Available !

www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 15 A
VGS = 10 V, ID = 25 A
VDS = 10 V, ID = 25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Turnon time
Switching time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 48 V, VGS = 10 V, ID = 45 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 45 A, VGS = 0 V
IDR = 45 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK2233
Min Typ. Max Unit
— — ±10 µA
— — 100 µA
60 — —
V
0.8 — 2.0
— 40 55
— 22 30
15 27 —
— 1800 —
— 350 —
— 900 —
V
m
S
pF
— 20 —
— 30 —
ns
— 40 —
— 130 —
— 60 —
— 40 —
— 20 —
nC
Min Typ. Max Unit
— — 45 A
— — 180 A
— — 1.8 V
— 90 — ns
— 0.1 — µC
K2233 Type ¦Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2 2002-07-31


Part Number K2233
Description 2SK2233
Maker Toshiba Semiconductor
Total Page 6 Pages
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