K2233 Datasheet | Toshiba

.. 2SK2233 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - π- MOSV) 2SK2233 Chopper Regulator, DC- DC Converter and Motor Drive Applications 4 V gate drive Low drain- source ON resistance High forward transfer admittance Low leakage current Enhancement- mode : RDS (ON) = 0.022 Ω (typ.) : |Yfs| = 27 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 60 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 m A) Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 100 246 45 10 150 - 55~150 Unit V V V A A W m J A m J °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch- c) Rth (ch- a) Max 1.25 50 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 µH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2002-07-31 .. 2SK2233 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut- off current Drain- source breakdown voltage Gate threshold voltage Drain- source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 48 V, VGS = 10 V, ID = 45 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS =...