K2266 Key Features
- 4 V gate drive
- Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.)
- High forward transfer admittance : |Yfs| = 27 S (typ.)
- Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)
- Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drai