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www.DataSheet.co.kr 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.13 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 200 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 200 200 ±20 15 45 45 166 15 4.
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