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K2611 - 2SK2611

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2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement−mode : Vth = 2.0 to 4.
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