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K2611 Datasheet - Toshiba Semiconductor

K2611_ToshibaSemiconductor.pdf

K2611 Datasheet Preview — Preview of K2611 PDF

Datasheet Details

Part number:

K2611

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

409.17 KB

Description:

2sk2611.

K2611, 2SK2611

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2611 DC *DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain *source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement *mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating U

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