K2611 Datasheet | Winsemi

Features - 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V - Ultra-low Gate charge(Typical 72nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) Silicon N-Channel MOSFET General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power...