K2611
Overview
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
- Ultra-low Gate charge(Typical 72nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃) K2611 Silicon N-Channel MOSFET
