K2611 - Silicon N-Channel MOSFET

Winsemi

General Description

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.

Key Features

11A,900V, RDS(on)(Max1.10Ω)@VGS=10V.
Ultra-low Gate charge(Typical 72nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) K2611 Silicon N-Channel MOSFET General.

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K2611 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	K2611
Manufacturer	Winsemi
File Size	623.14 KB
Description	Silicon N-Channel MOSFET
Datasheet	K2611 Datasheet

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Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) K2611 Silicon N-Channel MOSFET General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.