| Part Number | K2611 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) . ht: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cur. |
K2611 Datasheet and Specifications PDF
The K2611 is a 2SK2611.
| Part Number | K2611 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Winsemi |
| Overview |
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimi.
* 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V * Ultra-low Gate charge(Typical 72nC) * Fast Switching Capability * 100%Avalanche Tested * Maximum Junction Temperature Range(150℃) K2611 Silicon N-Channel MOSFET General Description This N-Channel enhancement mode power field effect transistors are produced u. |