Datasheet Summary
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2SK2613
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)
2SK2613
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
Unit: mm
- Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.)
- High forward transfer admittance: ïYfsï = 6.0 S (typ.)
- Low leakage current: IDSS = 100 µA (max) (VDS = 800 V)
- Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche...