K3067 Key Features
- Low drain−source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement−mode : RDS (ON) = 4.2 Ω (typ.) : |Yfs| = 1.7 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 600 V
- Part: K3067
- Description: 2SK3067
- Manufacturer: Toshiba
- Size: 152.96 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| K3017 | 2SK3017 |
| K3078 | SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR |
| K3090 | 2SK3090 |
| K30A06J3A | TK30A06J3A |