K3473 Datasheet - Toshiba Semiconductor

K3473 2SK3473

www.DataSheet4U.com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 2.

K3473-ToshibaSemiconductor.pdf