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2SK3473
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching Regulator Applications
Unit: mm
• • • •
Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.