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K3561 - 2SK3561

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Datasheet Details

Part number K3561
Manufacturer Toshiba Semiconductor
File Size 227.47 KB
Description 2SK3561
Datasheet download datasheet K3561 Datasheet
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2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.
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