K4A60DB
K4A60DB is TK4A60DB manufactured by Toshiba.
TK4A60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DB
Switching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.)
- High forward transfer admittance: |Yfs| = 2.2 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 600V)
- Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 m A)
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
1.14 ± 0.15
2.8 MAX. 13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15 Ф0.2 M A
2.6 ± 0.1 4.5 ± 0.2
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
IAR EAR Tch Tstg
Rating
600 ±30...
