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Toshiba Electronic Components Datasheet

K4A60DB Datasheet

TK4A60DB

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TK4A60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK4A60DB
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.)
High forward transfer admittance: |Yfs| = 2.2 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 600V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15
Ф0.2 M A
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
3.7
14.8
35
173
3.7
3.5
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
3.57
62.5
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 22 mH, RG = 25 Ω, IAR = 3.7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2009-06-05


Toshiba Electronic Components Datasheet

K4A60DB Datasheet

TK4A60DB

No Preview Available !

TK4A60DB
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
⎯ ⎯ ±1
IDSS
VDS = 600 V, VGS = 0 V
⎯ ⎯ 10
V (BR) DSS ID = 10 mA, VGS = 0 V
600
Vth VDS = 10 V, ID = 1 mA
2.4 4.4
RDS (ON) VGS = 10 V, ID = 1.9 A
1.6 2.0
Yfs
VDS = 10 V, ID = 1.9A
0.6 2.2
Ciss 540
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
3
Coss
60
tr
10 V
VGS
0V
ID =1.9A VOUT
18
ton
50 Ω
40
RL = 105 Ω
tf 8
VDD 200 V
toff Duty 1%, tw = 10 μs
55
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 3.7 A
Qgd
11
6 nC
5
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 3.7 A, VGS = 0 V
IDR = 3.7 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 3.7 A
⎯ ⎯ 14.8 A
⎯ ⎯ −1.7 V
1000
ns
5.5 ⎯ μC
Marking
K4A60DB
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2 2009-06-05


Part Number K4A60DB
Description TK4A60DB
Maker Toshiba Semiconductor
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