K4A60DB Description
TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current:.