K4A60DB Datasheet - Toshiba Semiconductor

K4A60DB TK4A60DB

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7 ± 0.2 3.9 3.0 15.0 ± 0.3 1.14 ± 0.15 2.8 MAX. 13 ± 0.5 Absolute Maximum Rat.

K4A60DB Features

* ment, equipment use

K4A60DB-ToshibaSemiconductor.pdf