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Toshiba Electronic Components Datasheet

MP4211 Datasheet

POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE

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MP4211 pdf
MP4211
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne)
MP4211
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
Industrial Applications
Unit: mm
4-V gate drivability
Small package by full molding (SIP 10 pin)
High drain power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.16 (typ.)
High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V)
IDSS = 100 µA (max) (VDS = 60 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
(1-device operation, Ta = 25°C)
Drain power dissipation
(- device operation, Ta = 25°C)
Single pulse avalanche energy
(Note 1)
Avalanche current
1-device
Repetitive avalanche operation
energy
(Note 2) 4-device
operation
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PDT
EAS
IAR
EAR
EART
Tch
Tstg
Rating
60
60
±20
5
20
2.0
Unit
V
V
V
A
W
4.0 W
273
5
0.2
0.4
150
55 to 150
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-25A1C
Weight: 2.1 g (typ.)
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 , IAR = 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2004-07-01


Toshiba Electronic Components Datasheet

MP4211 Datasheet

POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE

No Preview Available !

MP4211 pdf
Array Configuration
1
MP4211
2
3
4
5
10
6
7
8
9
Thermal Characteristics
Characteristics
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for t = 10 s)
Symbol Max Unit
ΣRth (ch-a)
31.2
°C/W
TL 260 °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(Gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
0V
VGS
ton 10 V
ID = 2.5 A VOUT
tf
VDD ≈ −30 V
toff VIN: tr, tf < 5 ns, duty 1%, tw = 10 µs
Qg
Qgs VDD ≈ −48 V, VGS = 10 V, ID = 5 A
Qgd
2
Min
60
0.8
2.0
Typ. Max Unit
±10
― −100
――
― −2.0
0.24 0.28
0.16 0.19
4.0
630
95
290
µA
µA
V
V
S
pF
pF
pF
25
45
ns
55
200
22 nC
16 nC
6 nC
2004-07-01


Part Number MP4211
Description POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE
Maker Toshiba Semiconductor
Total Page 7 Pages
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