MP4212 Overview
MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed Switching Applications H-Switch Driver 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (N-ch) 160 mΩ (typ.) (P-ch) High forward transfer admittance:.