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MP4212 - DUAL-Channel Power MOSFET

Features

  • Capacitance.
  • VDS 5000 3000.
  • 2.0 Vth.
  • Tc Vth (V) Gate threshold voltage (pF).
  • 1.6 1000 500 300 Common source 100 50 VGS = 0 V f = 1 MHz Tc = 25°C.
  • 0.3.
  • 1.
  • 3.
  • 10.
  • 30.
  • 100 Coss Ciss C Capacitance.
  • 1.2.
  • 0.8 Crss 30.
  • 0.1.
  • 0.4 Common source VDS =.
  • 10 V ID =.
  • 1 mA Drain-source voltage VDS (V) 0.
  • 80.
  • 40 0 40 80 120 160 Case temperature.

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Full PDF Text Transcription

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MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed Switching Applications H-Switch Driver • • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (N-ch) 160 mΩ (typ.) (P-ch) High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.
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