MP4211
Key Features
- 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Industrial Applications Unit: mm
