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MP4211 - P-Channel Power MOSFET

Features

  • are used within specified operating ranges as set forth in the most recent.

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Full PDF Text Transcription

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MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne) MP4211 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.8 to −2.
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