Datasheet4U Logo Datasheet4U.com

MP4212 - DUAL-Channel Power MOSFET

Features

  • Capacitance.
  • VDS 5000 3000.
  • 2.0 Vth.
  • Tc Vth (V) Gate threshold voltage (pF).
  • 1.6 1000 500 300 Common source 100 50 VGS = 0 V f = 1 MHz Tc = 25°C.
  • 0.3.
  • 1.
  • 3.
  • 10.
  • 30.
  • 100 Coss Ciss C Capacitance.
  • 1.2.
  • 0.8 Crss 30.
  • 0.1.
  • 0.4 Common source VDS =.
  • 10 V ID =.
  • 1 mA Drain-source voltage VDS (V) 0.
  • 80.
  • 40 0 40 80 120 160 Case temperature.

📥 Download Datasheet

Datasheet Details

Part number MP4212
Manufacturer Toshiba
File Size 275.85 KB
Description DUAL-Channel Power MOSFET
Datasheet download datasheet MP4212 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MP4245 Buck-Boost Converter MPS
MP4245GVE Buck-Boost Converter MPS
MP4247 Buck-Boost Converter MPS
MP4248 Buck-Boost MPS
MP4248GQV Buck-Boost MPS

Other Datasheets by Toshiba

Part Number Description
MP4210 N-Channel Power MOSFET
MP4211 P-Channel Power MOSFET
MP4201 N-Channel Power MOSFET
MP4202 N-Channel Power MOSFET
MP4203 P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed Switching Applications H-Switch Driver • • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (N-ch) 160 mΩ (typ.) (P-ch) High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.
Published: |