Datasheet Summary
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
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Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current...