MT3S113 transistor equivalent, silicon-germanium npn epitaxial planar type transistor.
* Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz)
Marking
R7
1. Base 2. Emitter 3. Collector
Absolute Maximum Rating.
MT3S113
Unit: mm
FEATURES
* Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2=11.8dB (typ.) (@ .
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